The K1050X is a modern, solid-state RF plasma reactor designed to used in research and development and small-scale production for a wide and varied range of plasma etching, plasma ashing and plasma cleaning applications.
K1050X built to use - 24 hours a day for some plasma ashing schedules.,
The microprocessor control with automatic operation offers durability and simplicity of operation. Barrel systems isotropically (in all directions) and are suitable for a wide range of applications.
It uses a low pressure RF-induced gaseous discharge to modify specimen surfaces (or remove specimen material in a gentle, controlled way). A wide range of surface modification methods are available, using a variety of process gases. Using oxygen (or air) as the process gas, the molecules disassociate into chemically active atoms and molecules and the resulting ‘combustion’ products are conveniently carried away in the gas stream by the vacuum system.
The most significant advantage over alternative methods is that the plasma etching and ashing processes are dry (no wet chemicals are needed) and take place at low temperatures.
Key features
- Drawer type specimen stage - gives easy specimen access
- Micro-controller: fully programmable by the operator and easy, flexible operation
- Fully-automatic operation
- Modern solid state 100 W 13.56 MHz RF power supply - rugged and reliable
- Two gas flow meters - allows precise control and mixing of process gases, especially useful for plasma etching processes
- Vent control - minimal specimen disturbance - especially useful for fine plasma-ashed specimens