GAIA3 is the ideal platform for performing the most challenging nanoengineering applications that require ultimate precision and capabilities for microanalysis.
All features make GAIA3 the ideal instrument for applications in which imaging at low beam energies is a requirement to preserve sensitive structures in the samples that can get damaged by the electron beam like low-k dielectric materials, photoresists or uncoated biological specimens.
Key Features:
- TriLens system: unique combination of three lens and crossover-free beam path
- Advanced detection system with multiple TriSE and TriBE detectors
- Ultra-high resolution at low beam energy: 1 nm at 1 keV and 0.7 nm at 15 keV
- EquiPower thermal power dissipation system for electron column stability
- Rapid beam energy changes and currents up to 400 nA
- High level technology in resolution for milling and imaging
- Shortest time to result in cross-sectioning and TEM sample preparation
- Ideal for 3D ultra-structural studies of biological specimens