The world’s first fully integrated Xe plasma source focused ion beam (FIB) with scanning electron microscopy (SEM) enables extremely high ion currents up to 2 μA.
This high current increased milling speeds up to 50 times faster than conventional Ga source FIBs.
So FERA3 is the ideal instrument for accomplishing large volume milling tasks (that either time-consuming or practically impossible).
Key Features:
- Unique Wide Field Optics design with a proprietary Intermediate Lens (IML) offering a different working and displaying modes.
- Fully automated electron optics set up and alignment
- Fast imaging rate up to 20ns
- Real time In-Flight Beam Tracing (for beam optimization and direct and continuous control of the beam spot size and beam current.)
- Unique live stereoscopic imaging using the advanced 3D Beam Technology
- Larg mass Xe ions with larger FIB current range for ultra-fast sputtering even without gas-assisted enhancement
- Remarkable reduction in ion implantation compared to Ga Source FIBs
- Xe as a noble gas, don't alter electrical properties in the vicinity of the patterned area
- No intermetallic compounds formed during milling